Dislocation density and Fe impurity affect minority carrier lifetime which is concerned with performance.
Low O impurity determines a good LID performance.
Minority carrier lifetime
For minority carrier lifetime, mono silicon is an order of magnitude higher than multi silicon.
Mono-C-Si module generates less heat than multi-c-Si modules, because the carrier recombination, which convert the electricity to heat, is less in mono cells than in multi cells.
Therefore, the nominal operating cell temperature(NOCT) for mono cell is less than multi-cell, in other words, the mono-module works at lower temperature which leads to more energy generation.
Hi-mo 1Lower LID,Higher reliability
Lower initial light induced degradation(LID), higher reliability.
More energy production than normal mono and multi modules.
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